| PART |
Description |
Maker |
| T7000425 T7002025 T7000225 T7001335 T7002235 T7000 |
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 1200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1800 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 2000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 600 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 第一阶段控制晶闸管（250-350安培200-2200伏特
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 2200 V, SCR
|
Powerex Power Semicondu...
Powerex Power Semiconductor...
PHOENIX CONTACT Deutschland GmbH
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
|
| PE9601EK 9601-00 9601-01 9601-11 PE9601 |
2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOS?/a> Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOSInteger-N PLL for Rad Hard Applications
2200 MHz UltraCMOS⑩ Integer-N PLL for Rad Hard Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| NTHD4502N NTHD4502NT1 NTHD4502NT1G |
Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™
POWER MOSFET 30 V, 3.9 A, DUAL N−CHANNEL CHIPFET
Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET 2200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ONSEMI[ON Semiconductor]
|
| 2205-H-RC 2202-V-RC 2218-H-RC 2215-V-RC 2208-H-RC |
Toroidal Inductor; Series:2200; Inductance:22uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:10.3A; DC Resistance Max:0.010ohm; Leaded Process Compatible:Yes 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:12uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:12A; DC Resistance Max:0.008ohm; Leaded Process Compatible:Yes 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:330uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:3.3A; DC Resistance Max:0.10ohm; Leaded Process Compatible:Yes 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:180uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:3.8A; DC Resistance Max:0.075ohm; Leaded Process Compatible:Yes 1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:2200; Inductance:39uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:7.1A; DC Resistance Max:0.022ohm; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
High Current Toroid Inductors Horizontal or vertical mount Low cost
Toroidal Inductor; Series:2200; Inductance:68uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:4.9A; DC Resistance Max:0.046ohm; Leaded Process Compatible:Yes
Toroidal Inductor; Series:2200; Inductance:560uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:2.2A; DC Resistance Max:0.21ohm; Leaded Process Compatible:Yes
|
Bourns, Inc.
Bourns Electronic Solutions
BOURNS INC
Rohm
Bourns Electronic Solut...
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| PTL-16-430 PTL-10-432 PTL-44-430 PTL-46-430 ECL-11 |
TLS 2200 Voice & Data Comm Materials
|
List of Unclassifed Manufacturers
|
| MAAVCC0002 MAAVCC0002-TB MAAVCC0002TR MAAVCC0002-1 |
Voltage Variable Absorptive Attenuator, 1700 - 2200 MHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| SM1822-44 |
1800-2200 MHz 25 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| 2225-4L |
BJT
3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz
|
GHz Technology
|
| MA4EXP190H1-1277T |
Silicon Double Balanced HMIC Mixer 1700 - 2200 MHz
|
M/A-COM Technology Solutions, Inc.
|
| C927U222MYWDAA7317 |
Ceramic, Safety, C900_Y, 2200 pF, 20%, Y5U, Lead Spacing = 7.5mm
|
Kemet Corporation
|
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